Design and Performance Analysis Of Ultra Low Power 6T SRAM Using Adiabatic Technique

نویسندگان

  • Sunil Jadav
  • Vikrant
  • Munish Vashisath
چکیده

ABSTRACT: Power consumption has become a critical concern in both high performance and portable applications. Methods for power reduction based on the application of adiabatic techniques to CMOS circuits have recently come under renewed investigation. In thermodynamics, an adiabatic energy transfer through a dissipative medium is one in which losses are made arbitrarily small by causing the transfer to occur sufficiently slowly. In this work adiabatic technique is used for reduction of average power dissipation. Simulation of 6T SRAM cell has been done for 180nm CMOS technology. It shows that average power dissipation is reduced up to 75% using adiabatic technique and also shows the effect on static noise margin.

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

Design of 1024*16 Cm8 Ultra Low Voltage Sram with Self Time Power Reduction Technique

Technology scaling has enabled us to integrate both memory and logic circuits on a single chip. However, the performance of embedded memory and especially SRAM (Static Random Access Memory) that is widely used in the industry as on the on-chip memory cache in ultra low voltage applications can adversely affect the speed and power efficiency of the overall system. This report discusses the desig...

متن کامل

A single ended 6T SRAM cell design for ultra-low-voltage applications

In this paper, we present a novel six-transistor (6T) single-ended static random access memory (SE-SRAM) cell for ultralow-voltage applications. The proposed design has a strong 2.65X worst case read static noise margin (SNM) compared to a standard 6T SRAM. A strong write-ability of logic ‘one’ is achieved, which is problematic in an SE-SRAM cell with a 36% improvement compared to standard 6T S...

متن کامل

Ultra low voltage and low power Static Random Access Memory design using average 6.5T technique

Power Stringent Static Random Access Memory (SRAM) design is very much essential in embedded systems such as biomedical implants, automotive electronics and energy harvesting devices in which battery life, input power and execution delay are of main concern. With reduced supply voltage, SRAM cell design will go through severe stability issues. In this paper, we present a highly stable average n...

متن کامل

Energy Efficient Novel Design of Static Random Access Memory Memory Cell in Quantum-dot Cellular Automata Approach

This paper introduces a peculiar approach of designing Static Random Access Memory (SRAM) memory cell in Quantum-dot Cellular Automata (QCA) technique. The proposed design consists of one 3-input MG, one 5-input MG in addition to a (2×1) Multiplexer block utilizing the loop-based approach. The simulation results reveals the excellence of the proposed design. The proposed SRAM cell achieves 16% ...

متن کامل

6T SRAM at 45nm CMOS technology for low power optimization

SRAM is designed to provide an interface with CPU and to replace DRAMs in systems that require very low power consumption. Low power SRAM design is crucial since it takes a large fraction of total power and die area in high performance processors. A SRAM cell must meet the requirements for the operation in submicron/nano ranges. 8T SRAM is traditionally concerned as a more reliable memory cell,...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

عنوان ژورنال:
  • CoRR

دوره abs/1207.3302  شماره 

صفحات  -

تاریخ انتشار 2012